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Product name: IRFZ44N N-channel transistor
Specifications:
Size: 30mm*10mm/1.18in*0.39in
Maximum drain current: 49A
Maximum drain voltage: 55V
Maximum power loss: 94W
On-resistance: 17mΩ
Switching time: 24ns
Package type: TO-220AB
How it works: When the gate voltage is positive, a PN junction is formed between the n-type silicon layer and the gate, and the current cannot flow through. When the gate voltage is negative, the electric field between the gate and the n-type silicon layer causes the electrons on the n-type silicon layer to move closer to the gate, forming a conduction channel through which current can flow. At the same time, the positive electrode is connected to the source electrode, and the negative electrode is connected to the drain electrode, so that the current can enter the conduction channel from the source electrode and flow to the drain electrode. When the gate voltage is 0, the MOSFET is in a cut-off state and current cannot flow through.
Procedures for operating IRFZ44NPBF transistors include:
Avoid exceeding the maximum drain current, maximum drain voltage and maximum power loss;
Use an appropriate heat sink to ensure that the transistor does not overheat;
Avoid static electricity and mechanical damage, and avoid bending or scratching the pins;
Pay attention to the connection of the positive and negative poles, and avoid short circuit or reverse connection;
Select the appropriate control strategy and circuit topology according to the application scenario.
